Abstract: The temperature dependence of the electron and hole impact ionization coefficients in GaN has been investigated experimentally. Two types of p-i-n diodes grown on bulk GaN substrates have ...
Department of Chemical Engineering, University of Patras & FORTH-ICE/HT, Patras GR26504, Greece Particle Technology Laboratory, Department of Mechanical and Process Engineering, ETH Zürich, CH-8092 ...
Federal University of Espírito Santo, Fernando Ferrari Avenue, 514, Goiabeiras, Vitória-ES 29075-910, Brazil Federal University of Espírito Santo, Fernando Ferrari Avenue, 514, Goiabeiras, Vitória-ES ...
Defense Secretary Pete Hegseth summoned hundreds of admirals, generals, and senior enlisted leaders to Quantico, Virginia, on Tuesday to hear him announce a spate of personnel initiatives around ...
Abstract: The impact ionization induced breakdown and related high-temperature reverse bias (HTRB) behaviors are studied in 100-V Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs).
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